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| a FEATURES +1.8 V to +5.5 V Single Supply 2 (Typ) On Resistance Low On-Resistance Flatness -3 dB Bandwidth >200 MHz Rail-to-Rail Operation 6-Lead SOT-23 8-Lead SOIC Package Fast Switching Times tON 18 ns tOFF 12 ns Typical Power Consumption (<0.01 TTL/CMOS Compatible APPLICATIONS Battery Powered Systems Communication Systems Sample Hold Systems Audio Signal Routing Video Switching Mechanical Reed Relay Replacement CMOS Low Voltage 2 SPST Switches ADG701/ADG702 FUNCTIONAL BLOCK DIAGRAMS ADG701 S D IN ADG702 W) S D IN SWITCHES SHOWN FOR A LOGIC "1" INPUT GENERAL DESCRIPTION PRODUCT HIGHLIGHTS The ADG701/ADG702 are monolithic CMOS SPST switches. These switches are designed on an advanced submicron process that provides low power dissipation yet high switching speed, low on resistance, low leakage currents and -3 dB bandwidths of greater than 200 MHz can be achieved. The ADG701/ADG702 can operate from a single +1.8 V to +5.5 V supply making it ideal for use in battery powered instruments and with the new generation of DACs and ADCs from Analog Devices. As can be seen from the Functional Block Diagrams, with a logic input of "1" the switch of the ADG701 is closed, while that of the ADG702 is open. Each switch conducts equally well in both directions when ON. The ADG701/ADG702 are available in 6-lead SOT-23 and 8-lead SOIC packages. 1. +1.8 V to +5.5 V Single Supply Operation. The ADG701/ ADG702 offer high performance, including low on resistance and fast switching times and is fully specified and guaranteed with +3 V and +5 V supply rails. 2. Very Low RON (3 max at 5 V, 5 max at 3 V). At 1.8 V operation, RON is typically 40 over the temperature range. 3. On-Resistance Flatness RFLAT(ON) (1 max). 4. -3 dB Bandwidth >200 MHz. 5. Low Power Dissipation. CMOS construction ensures low power dissipation. 6. Fast tON/tOFF. 7. Tiny 6-Lead SOT-23 and 8-Lead SOIC. REV. A Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 World Wide Web Site: http://www.analog.com Fax: 781/326-8703 (c) Analog Devices, Inc., 1998 ADG701/ADG702-SPECIFICATIONS1 unless otherwise noted.) (VDD = 5 V Parameter ANALOG SWITCH Analog Signal Range On Resistance (RON) On-Resistance Flatness (RFLAT(ON)) LEAKAGE CURRENTS Source OFF Leakage IS (OFF) Drain OFF Leakage ID (OFF) Channel ON Leakage ID, IS (ON) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current IINL or IINH DYNAMIC CHARACTERISTICS2 tON tOFF Charge Injection Off Isolation B Version +25 C -40 C to +85 C 0 V to VDD 2 3 0.5 4 1.0 0.01 0.25 0.01 0.25 0.01 0.25 Units V typ max typ max nA typ nA max nA typ nA max nA typ nA max V min V max A typ A max ns typ ns max ns typ ns max pC typ dB typ dB typ MHz typ pF typ pF typ pF typ 10%, GND = 0 V. All specifications -40 C to +85 C Test Conditions/Comments VS = 0 V to VDD, IS = -10 mA; Test Circuit 1 VS = 0 V to VDD, IS = -10 mA VDD = +5.5 V VS = 4.5 V/1 V, VD = 1 V/4.5 V; Test Circuit 2 VS = 4.5 V/1 V, VD = 1 V/4.5 V; Test Circuit 2 VS = VD = 1 V, or 4.5 V; Test Circuit 3 0.35 0.35 0.35 2.4 0.8 0.005 0.1 VIN = VINL or VINH 12 18 8 12 5 -55 -75 200 17 17 38 Bandwidth -3 dB CS (OFF) CD (OFF) CD, CS (ON) POWER REQUIREMENTS IDD RL = 300 , C L = 35 pF VS = 3 V; Test Circuit 4 RL = 300 , C L = 35 pF VS = 3 V; Test Circuit 4 VS = 2 V, RS = 0 , CL = 1 nF; Test Circuit 5 RL = 50 , CL = 5 pF, f = 10 MHz RL = 50 , CL = 5 pF, f = 1 MHz; Test Circuit 6 RL = 50 , CL = 5 pF; Test Circuit 7 0.001 1.0 A typ A max VDD = +5.5 V Digital Inputs = 0 V or 5 V NOTES 1 Temperature ranges are as follows: B Versions: -40C to +85C. 2 Guaranteed by design, not subject to production test. Specifications subject to change without notice. -2- REV. A ADG701/ADG702 SPECIFICATIONS1 (V Parameter ANALOG SWITCH Analog Signal Range On Resistance (RON) DD =3V 10%, GND = 0 V. All specifications -40 C to +85 C unless otherwise noted.) B Version +25 C -40 C to +85 C 0 V to VDD 3.5 5 1.5 0.01 0.25 0.01 0.25 0.01 0.25 6 Units V typ max typ nA typ nA max nA typ nA max nA typ nA max V min V max A typ A max ns typ ns max ns typ ns max pC typ dB typ dB typ MHz typ pF typ pF typ pF typ VDD = +3.3 V Digital Inputs = 0 V or 3 V VIN = VINL or VINH Test Conditions/Comments On-Resistance Flatness (RFLAT(ON)) LEAKAGE CURRENTS Source OFF Leakage IS (OFF) Drain OFF Leakage ID (OFF) Channel ON Leakage ID, IS (ON) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current IINL or IINH DYNAMIC CHARACTERISTICS2 tON tOFF Charge Injection Off Isolation VS = 0 V to VDD, IS = -10 mA; Test Circuit 1 VS = 0 V to VDD, IS = -10 mA VDD = +3.3 V VS = 3 V/1 V, VD = 1 V/3 V; Test Circuit 2 VS = 3 V/1 V, VD = 1 V/3 V; Test Circuit 2 VS = VD = 1 V, or 3 V; Test Circuit 3 0.35 0.35 0.35 2.0 0.4 0.005 0.1 14 20 8 13 4 -55 -75 200 17 17 38 Bandwidth -3 dB CS (OFF) CD (OFF) CD, CS (ON) POWER REQUIREMENTS IDD RL = 300 , C L = 35 pF VS = 2 V, Test Circuit 4 RL = 300 , C L = 35 pF VS = 2 V, Test Circuit 4 VS = 1.5 V, RS = 0 , CL = 1 nF; Test Circuit 5 RL = 50 , CL = 5 pF, f = 10 MHz RL = 50 , CL = 5 pF, f = 1 MHz; Test Circuit 6 RL = 50 , CL = 5 pF; Test Circuit 7 0.001 1.0 A typ A max NOTES 1 Temperature ranges are as follows: B Versions: -40 C to +85C. 2 Guaranteed by design, not subject to production test. Specifications subject to change without notice. REV. A -3- ADG701/ADG702 ABSOLUTE MAXIMUM RATINGS 1 (TA = +25C unless otherwise noted) VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 V to +7 V Analog, Digital Inputs2 . . . . . . . . . . . . . . -0.3 V to VDD +0.3 V or 30 mA, Whichever Occurs First Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . 30 mA Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA (Pulsed at 1 ms, 10% Duty Cycle Max) Operating Temperature Range Industrial (B Version) . . . . . . . . . . . . . . . . . -40C to +85C Storage Temperature Range . . . . . . . . . . . . . -65C to +150C Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . +150C SOIC Package, Power Dissipation . . . . . . . . . . . . . . . 315 mW JA Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 206C/W JC Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . 44C/W SOT-23 Package, Power Dissipation . . . . . . . . . . . . . . 282 mW JA Thermal Impedance . . . . . . . . . . . . . . . . . . . . 229.6C/W JC Thermal Impedance . . . . . . . . . . . . . . . . . . . . 91.99C/W Lead Temperature, Soldering Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . . +215C Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . +220C ESD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 kV NOTES 1 Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Only one absolute maximum rating may be applied at any one time. 2 Overvoltages at IN, S or D will be clamped by internal diodes. Current should be limited to the maximum ratings given. Table I. Truth Table ADG701 In 0 1 ADG702 In 1 0 Switch Condition OFF ON ORDERING GUIDE Model ADG701BRT ADG702BRT ADG701BRM ADG702BRM Temperature Range -40C to +85C -40C to +85C -40C to +85C -40C to +85C Brand* S3B S4B S3B S4B Package Descriptions SOT-23 (Plastic Surface Mount) SOT-23 (Plastic Surface Mount) SOIC (Small Outline) SOIC (Small Outline) Package Options RT-6 RT-6 RM-8 RM-8 *Brand = Due to package size limitations, these three characters represent the part number. CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the ADG701/ADG702 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. WARNING! ESD SENSITIVE DEVICE -4- REV. A ADG701/ADG702 PIN CONFIGURATIONS 8-Lead SOIC (RM-8) TERMINOLOGY D1 NC 2 NC 3 VDD 4 8 S GND IN NC ADG701/ ADG702 TOP VIEW (Not to Scale) 7 6 5 VDD GND S D IN RON RFLAT(ON) NC = NO CONNECT 6-Lead Plastic Surface Mount (SOT-23) (RT-6) D1 S2 GND 3 6 ADG701/ ADG702 VDD NC 5 TOP VIEW 4 IN (Not to Scale) NC = NO CONNECT IS (OFF) ID (OFF) ID, IS (ON) VD (VS) CS (OFF) CD (OFF) CD, CS (ON) tON tOFF Off Isolation Charge Injection Bandwidth On Response On Loss Most Positive Power Supply Potential. Ground (0 V) Reference. Source Terminal. May be an input or output. Drain Terminal. May be an input or output. Logic Control Input. Ohmic Resistance Between D and S. Flatness is defined as the difference between the maximum and minimum value of on resistance as measured over the specified analog signal range. Source Leakage Current with the Switch "OFF." Drain Leakage Current with the Switch "OFF." Channel Leakage Current with the Switch "ON." Analog Voltage on Terminals D, S. "OFF" Switch Source Capacitance. "OFF" Switch Drain Capacitance. "ON" Switch Capacitance. Delay between applying the digital control input and the output switching on. See Test Circuit 4. Delay between applying the digital control input and the output switching off. A measure of Unwanted Signal Coupling Through an "OFF" Switch. A measure of the glitch impulse transferred from the digital input to the analog output during switching. The frequency at which the output is attenuated by -3 dBs. The frequency response of the "ON" switch. The voltage drop across the "ON" switch seen on the On Response vs. Frequency plot as how many dBs the signal is away from 0 dB at very low frequencies. REV. A -5- ADG701/ADG702 -Typical Performance Characteristics 3.5 VDD = 2.7V 3.0 2.5 VDD = 3.0V 2.0 RON - 1.5 VDD = 4.5V TA = 25 C 1m 10m VDD = +5V 100 ISUPPLY - A 10 VDD = 5.0V 1 1.0 0.5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VD OR VS - DRAIN OR SOURCE VOLTAGE - V 100n 10n 1n 10 100 1k 100k 10k FREQUENCY - Hz 1M 10M Figure 1. On Resistance as a Function of VD (VS) Single Supplies Figure 4. Supply Current vs. Input Switching Frequency 3.5 VDD = +3V 3.0 +85 C OFF ISOLATION - dB 2.5 +25 C 2.0 RON - -40 C 1.5 -10 -20 -30 -40 -50 -60 -70 -80 -90 VDD = +5V, +3V 1.0 0.5 -100 0 0 0.5 1.0 1.5 2.0 2.5 3.0 VD OR VS - DRAIN OR SOURCE VOLTAGE - V -110 10k 100k 10M 1M FREQUENCY - Hz 100M Figure 2. On Resistance as a Function of VD (VS) for Different Temperatures VDD = 3 V Figure 5. Off Isolation vs. Frequency 3.5 VDD = +5V 3.0 2.5 +85 C 2.0 RON - +25 C 1.5 -40 C 0 VDD = +3V ON RESPONSE - dB -2 -4 1.0 0.5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VD OR VS - DRAIN OR SOURCE VOLTAGE - V -6 10k 100k 1M 10M FREQUENCY - Hz 100M Figure 3. On Resistance as a Function of VD (VS) for Different Temperatures VDD = 5 V Figure 6. On Response vs. Frequency -6- REV. A ADG701/ADG702 Test Circuits IDS V1 IS (OFF) S D A VS S D ID (OFF) A VD VS S D ID (ON) A VD VS RON = V1/IDS Test Circuit 1. On Resistance Test Circuit 2. Off Leakage Test Circuit 3. On Leakage VDD 0.1 F VIN ADG701 VDD S VS D RL 300 GND VOUT VIN IN CL 35pF VOUT 50% 50% ADG702 50% 90% 50% 90% tON tOFF Test Circuit 4. Switching Times VDD VDD RS VS IN GND S D VOUT CL 1nF VIN ADG701 ON OFF VIN VOUT ADG702 VOUT QINJ = CL VOUT Test Circuit 5. Charge Injection VDD 0.1 F 0.1 F VDD S D RL 50 IN GND VS VIN GND VOUT S VDD D RL 50 VOUT VDD IN VS VIN Test Circuit 6. Off Isolation Test Circuit 7. Bandwidth REV. A -7- ADG701/ADG702 APPLICATIONS INFORMATION The ADG701/ADG702 belongs to Analog Devices' new family of CMOS switches. This series of general purpose switches have improved switching times, lower on resistance, higher bandwidth, low power consumption and low leakage currents. ADG701/ADG702 Supply Voltages Functionality of the ADG701/ADG702 extends from +1.8 V to +5.5 V single supply, which makes it ideal for battery powered instruments, where important design parameters are power efficiency and performance. It is important to note that the supply voltage effects the input signal range, the on resistance and the switching times of the part. By taking a look at the typical performance characteristics and the specifications, the effects of the power supplies can be clearly seen. For VDD = +1.8 V operation, RON is typically 40 over the temperature range. On Response vs. Frequency The dominant effect of the output capacitance, CD, causes the pole breakpoint frequency to occur first. Therefore, in order to maximize bandwidth a switch must have a low input and output capacitance and low on resistance. The On Response vs. Frequency plot for the ADG701/ADG702 can be seen in Figure 6. Off Isolation Off isolation is a measure of the input signal coupled through an off switch to the switch output. The capacitance, CDS, couples the input signal to the output load, when the switch is off, as shown in Figure 8. CDS S VIN CD D CLOAD RLOAD VOUT Figure 7 illustrates the parasitic components that affect the ac performance of CMOS switches (the switch is shown surrounded by a box). Additional external capacitances will further degrade some performance. These capacitances affect feedthrough, crosstalk and system bandwidth. CDS S RON VIN CD D CLOAD RLOAD VOUT Figure 8. Off Isolation Is Affected by External Load Resistance and Capacitance Figure 7. Switch Represented by Equivalent Parasitic Components The transfer function that describes the equivalent diagram of the switch (Figure 7) is of the form (A)s shown below. s(RON CDS ) + 1 A(s) = RT s(RON CT RT ) + 1 where: CT = CLOAD + CD + CDS RT = RLOAD /(RLOAD + RON) The larger the value of CDS, larger values of feedthrough will be produced. The typical performance characteristic graph of Figure 5 illustrates the drop in off-isolation as a function of frequency. From dc to roughly 1 MHz, the switch shows better than -75 dB isolation. Up to frequencies of 10 MHz, the off isolation remains better than -55 dB. As the frequency increases, more and more of the input signal is coupled through to the output. Off-isolation can be maximized by choosing a switch with the smallest CDS as possible. The values of load resistance and capacitance affect off isolation also, as they contribute to the coefficients of the poles and zeros in the transfer function of the switch when open. s(RLOAD CDS ) A(s) = s(RLOAD )(CT ) +1 OUTLINE DIMENSIONS Dimensions shown in inches and (mm). 8-Lead SOIC (RM-8) 0.122 (3.10) 0.114 (2.90) 6-Lead Plastic Surface Mount (SOT-23) (RT-6) 0.122 (3.10) 0.106 (2.70) 8 5 0.122 (3.10) 0.114 (2.90) 0.199 (5.05) 0.187 (4.75) 1 4 0.071 (1.80) 0.059 (1.50) PIN 1 6 1 5 2 4 3 0.118 (3.00) 0.098 (2.50) PIN 1 0.0256 (0.65) BSC 0.120 (3.05) 0.112 (2.84) 0.006 (0.15) 0.002 (0.05) 0.018 (0.46) SEATING 0.008 (0.20) PLANE 0.043 (1.09) 0.037 (0.94) 0.011 (0.28) 0.003 (0.08) 0.120 (3.05) 0.112 (2.84) 33 27 0.075 (1.90) BSC 0.051 (1.30) 0.035 (0.90) 0.006 (0.15) 0.000 (0.00) 0.037 (0.95) BSC 0.057 (1.45) 0.035 (0.90) 0.020 (0.50) SEATING 0.010 (0.25) PLANE 10 0.009 (0.23) 0 0.003 (0.08) 0.022 (0.55) 0.014 (0.35) 0.028 (0.71) 0.016 (0.41) -8- REV. A PRINTED IN U.S.A. C3292a-0-8/98 The signal transfer characteristic is dependent on the switch channel capacitance, CDS. This capacitance creates a frequency zero in the numerator of the transfer function A(s). Because the switch on resistance is small, this zero usually occurs at high frequencies. The bandwidth is a function of the switch output capacitance combined with CDS and the load capacitance. The frequency pole corresponding to these capacitances appears in the denominator of A(s). |
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